Method of manufacturing a closed cell trench MOSFET
US7361558B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 20, 2005 |
| Grant date | Apr 22, 2008 |
| Priority date | — |
| Expiry date | Jan 20, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
Abstract
Embodiments of the present invention provide an improved closed cell trench metal-oxide-semiconductor field effect transistor (TMOSFET). The closed cell TMOSFET comprises a drain, a body region disposed above the drain region, a gate region disposed in the body region, a gate insulator region, a plurality of source regions disposed at the surface of the body region proximate to the periphery of the gate insulator region. A first portion of the gate region and the gate oxide region are formed as parallel elongated structures. A second portion of the gate region and the oxide region are formed as normal-to-parallel elongated structures. A portion of the gate and drain overlap region are selectively blocked by the body region, resulting in lower overall gate to drain capacitance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.