Passivative chemical mechanical polishing composition for copper film planarization
US7361603B2 · kind B2 · utility
18Cited by
13References
40Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 28, 2005 |
| Grant date | Apr 22, 2008 |
| Priority date | — |
| Expiry date | Apr 28, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A CMP composition containing 5-aminotetrazole, e.g., in combination with oxidizing agent, chelating agent, abrasive and solvent and a method of use. Such CMP composition may be diluted during the CMP polish to minimize the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions in the CMP composition and at the copper/CMP composition interface during CMP processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.