Terminal pad structures and methods of fabricating same
US7361993B2 · kind B2 · utility
12Cited by
6References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 9, 2005 |
| Grant date | Apr 22, 2008 |
| Priority date | — |
| Expiry date | May 9, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Terminal pads and methods of fabricating terminal pads. The methods including forming a conductive diffusion barrier under a conductive pad in or overlapped by a passivation layer comprised of multiple dielectric layers including diffusion barrier layers. The methods including forming the terminal pads subtractively or by a damascene process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.