Seed and seedholder combinations for high quality growth of large silicon carbide single crystals
US7364617B2 · kind B2 · utility
3Cited by
19References
16Claims
0Family size
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Key dates
| Filing date | Feb 5, 2007 |
| Grant date | Apr 29, 2008 |
| Priority date | — |
| Expiry date | Feb 5, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1032
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A silicon carbide seeded sublimation method is disclosed. The method includes the steps of nucleating growth on a seed crystal growth face that is between about 1° and 10° off-axis from the (0001) plane of the seed crystal while establishing a thermal gradient between the seed crystal and a source composition that is substantially perpendicular to the basal plane of the off-axis crystal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.