Manufacturing method of semiconductor substrate
US7364980B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Oct 6, 2006 |
| Grant date | Apr 29, 2008 |
| Priority date | — |
| Expiry date | Nov 11, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Closure at the opening of a trench with an epitaxial film is restrained, and thereby, filling morphology in the trenches is improved. A method for manufacturing a semiconductor substrate includes a step for growing an epitaxial layer 11 on the surface of a silicon substrate 13, a step of forming a trench 14 in this epitaxial layer, and a step of filling the inside of the trench 14 with the epitaxial film 12, wherein mixed gas made by mixing halogenoid gas into silicon source gas is circulated as material gas in filling the inside of the trench with the epitaxial film, and when the standard flow rate of the halogenoid gas is defined as Xslm and the film formation speed of the epitaxial film formed by the circulation of the silicon source gas is defined as Yμm/min, in the case when the aspect ratio of the trench is less than 10, an expression Y<0.2X+0.10 is satisfied, and in the case that the aspect ratio of the trench is between 10 and less than 20, an expression Y<0.2X+0.05 is satisfied, and in the case that the aspect ratio of the trench is 20 or more, an expression Y<0.2X is satisfied.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.