Buffer-layer treatment of MOCVD-grown nitride structures
US7364991B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 27, 2006 |
| Grant date | Apr 29, 2008 |
| Priority date | — |
| Expiry date | Nov 15, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods are disclosed for fabricating a compound nitride semiconductor structure. An amorphous buffer layer that includes nitrogen and a group-III element is formed over a substrate disposed within a substrate processing chamber at a first temperature. The temperature within the chamber is increased to a second temperature at which the amorphous buffer layer coalesces into crystallites over the substrate. The substrate is exposed to a corrosive agent to destroy at least some of the crystallites. A crystalline nitride layer is formed over the substrate at a third temperature using the crystallites remaining after exposure to the corrosive agent as seed crystals. The third temperature is greater than the first temperature. The crystalline nitride layer also includes nitrogen and a group-III element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.