Jacob Smith
14Patents
7h-index
29Co-inventors
58Inventor score
Filing activity: Jul 6, 2004 → Jun 16, 2009
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7601652B2 | Method for treating substrates and films with photoexcitation | Electricity | 469 | Active |
| US7364991B2 | Buffer-layer treatment of MOCVD-grown nitride structures | Electricity | 16 | Active |
| US7674352B2 | System and method for depositing a gaseous mixture onto a substrate surface using a showerhead apparatus | Chemistry; Metallurgy | 13 | Active |
| US7560364B2 | Dislocation-specific lateral epitaxial overgrowth to reduce dislocation density of nitride films | Electricity | 12 | Expired |
| US7459380B2 | Dislocation-specific dielectric mask deposition and lateral epitaxial overgrowth to reduce dislocation density of nitride films | Electricity | 9 | Active |
| US7416995B2 | Method for fabricating controlled stress silicon nitride films | Electricity | 9 | Active |
| US7488690B2 | Silicon nitride film with stress control | Electricity | 9 | Expired |
| US7585769B2 | Parasitic particle suppression in growth of III-V nitride films using MOCVD and HVPE | Electricity | 7 | Active |
| US7470599B2 | Dual-side epitaxy processes for production of nitride semiconductor structures | Electricity | 3 | Active |
| US7781016B2 | Method for measuring precursor amounts in bubbler sources | Chemistry; Metallurgy | 2 | Active |
| US7374960B1 | Stress measurement and stress balance in films | Electricity | 1 | Active |
| US9892941B2 | Multi-zone resistive heater | Electricity | 1 | Active |
| US7575982B2 | Stacked-substrate processes for production of nitride semiconductor structures | Electricity | 1 | Active |
| US7399653B2 | Nitride optoelectronic devices with backside deposition | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.