Amorphous layers in a magnetic tunnel junction device
US7369376B2 · kind B2 · utility
8Cited by
13References
15Claims
0Family size
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Key dates
| Filing date | Mar 15, 2005 |
| Grant date | May 6, 2008 |
| Priority date | — |
| Expiry date | Jun 5, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/15
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An improved TMR device is disclosed. The ferromagnetic layers of the device, particularly those that contact the dielectric tunneling layer have an amorphous structure as well as a minimum thickness (of about 15 Å). A preferred material for contacting the dielectric layer is CoFeB. Ways of overcoming problems relating to magnetostriction are disclosed and a description of a process for manufacturing the device is included.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.