Semiconductor device, process for producing the same and process for producing metal compound thin film
US7372112B2 · kind B2 · utility
2Cited by
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4Claims
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Key dates
| Filing date | Mar 24, 2005 |
| Grant date | May 13, 2008 |
| Priority date | — |
| Expiry date | Jul 21, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high dielectric gate insulating film having the structure that a high-nitrogen layer, a low-nitrogen layer, and a high-nitrogen layer are layered in this order from a silicon-substrate side.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.