Method to fabricate aligned dual damascene openings
US7372156B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 5, 2005 |
| Grant date | May 13, 2008 |
| Priority date | — |
| Expiry date | Jul 13, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An aligned dual damascene opening structure, comprising the following. A structure having a metal structure formed thereover. A patterned layer stack over the metal structure; the layer stack comprising, in ascending order: a patterned bottom etch stop layer; a patterned lower dielectric material layer; a patterned middle etch stop layer; and a patterned middle dielectric material layer; the lower and middle dielectric layers being comprised of the same material. An upper trench opening in the patterned bottom etch stop layer and the patterned lower dielectric material layer; and a lower via opening in the patterned middle etch stop layer and the patterned middle dielectric material layer. The lower via opening being in communication with the upper trench opening. Wherein the upper trench opening and the lower via opening comprise an aligned dual damascene opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.