Patent · US Expired

Memory having CBRAM memory cells and method

US7372716B2 · kind B2 · utility

11Cited by

3References

14Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Thomas Roehr · Yokohama, JP
Ralf Symanczyk · Bad Aibling, DE
Michael Kund · Bad Aibling, DE

Key dates

Filing date	Aug 23, 2005
Grant date	May 13, 2008
Priority date	—
Expiry date	Jan 3, 2026

Classification

Technology area (CPC G)Physics
CPC primaryG11C2013/0078
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A memory cell arrangement has a plurality of memory cells of the CBRAM type and a programming apparatus, the memory cells being arranged along bit lines and each bit line having a programming apparatus. The invention provides for the programming apparatus to comprise a charge storage device and a switchable charging apparatus. The inventive method for programming memory cells of the CBRAM type is carried out in such a manner that, a given quantity of an electrical charge is stored in a charge storage device, and the stored quantity of electrical charge is transferred to the memory cell to be programmed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.