Stress measurement and stress balance in films

US7374960B1 · kind B1 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• David P. Bour · Cupertino, US
• Sandeep Nijhawan · Los Altos, US
• Lori D. Washington · Union City, US
• Jacob Smith · Santa Clara, US

Key dates

• Filing date: Aug 23, 2006
• Grant date: May 20, 2008
• Expiry date: Aug 23, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0262
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods and systems are provided of fabricating a compound nitride semiconductor structure. A substrate is disposed within a processing chamber into which a group-III precursor and a nitrogen precursor are flowed. A layer is deposited over the substrate with a thermal chemical-vapor-deposition process using the precursors. The substrate is transferred to a transfer chamber where a temperature and a curvature of the layer are measured. The substrate is then transferred to a second processing chamber where a second layer is deposited.