Recycling a wafer comprising a buffer layer, after having separated a thin layer therefrom

US7378729B2 · kind B2 · utility

Assignee

• S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES · FR

Inventors

• Bruno Ghyselen · La Tour sans Venin, FR
• Cecile Aulnette · Grenoble, FR
• Bénédite Osternaud · Yssingeaux, FR
• Yves Mathieu Le Vaillant · Grenoble, FR
• Takeshi Akatsu · Meylan, FR

Key dates

• Filing date: Nov 23, 2005
• Grant date: May 27, 2008
• Expiry date: Jan 23, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02032
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A donor wafer resulting from a method of recycling the wafer after detaching at least one useful layer. The donor wafer includes a substrate; a buffer structure on the substrate; a protective layer associated with the buffer structure; and a post detachment layer located above the buffer structure and presenting projections or rough portions on its surface. The protective layer prevents removal of the entire buffer structure when the post detachment layer is removed.