Patent · US Active

Integrated thin-film resistor with direct contact

US7382055B2 · kind B2 · utility

6Cited by
5References
6Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 29, 2007
Grant dateJun 3, 2008
Priority date
Expiry dateAug 29, 2027

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D86/85

Abstract

A BEOL thin-film resistor adapted for flexible integration rests on a first layer of ILD. The thickness of the first layer of ILD and the resistor thickness combine to match the nominal design thickness of vias in the layer of concern. A second layer of ILD matches the resistor thickness and is planarized to the top surface of the resistor. A third layer of ILD has a thickness equal to the nominal value of the interconnections on this layer. Dual damascene interconnection apertures and apertures for making contact with the resistor are formed simultaneously, with the etch stop upper cap layer in the resistor protecting the resistive layer while the vias in the dual damascene apertures are formed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.