Methods of forming DRAM arrays
US7384847B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 21, 2005 |
| Grant date | Jun 10, 2008 |
| Priority date | — |
| Expiry date | Feb 6, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/908
Abstract
The invention includes memory arrays, and methods which can be utilized for forming memory arrays. A patterned etch stop can be used during memory array fabrication, with the etch stop covering storage node contact locations while leaving openings to bitline contact locations. An insulative material can be formed over the etch stop and over the bitline contact locations, and trenches can be formed through the insulative material. Conductive material can be provided within the trenches to form bitline interconnect lines which are in electrical contact with the bitline contact locations, and which are electrically isolated from the storage node contact locations by the etch stop. In subsequent processing, openings can be formed through the etch stop to the storage node contact locations. Memory storage devices can then be formed within the openings and in electrical contact with the storage node contact locations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.