Reducing oxidation under a high K gate dielectric
US7387927B2 · kind B2 · utility
6Cited by
13References
10Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 10, 2004 |
| Grant date | Jun 17, 2008 |
| Priority date | — |
| Expiry date | Jul 20, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metal layer is formed on a dielectric layer, which is formed on a substrate. After forming a masking layer on the metal layer, the exposed sides of the dielectric layer are covered with a polymer diffusion barrier.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.