Patent · US Expired

Optical metrology optimization for repetitive structures

US7388677B2 · kind B2 · utility

16Cited by
17References
29Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 18, 2005
Grant dateJun 17, 2008
Priority date
Expiry dateAug 23, 2025

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F7/70625
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

The top-view profiles of repeating structures in a wafer are characterized and parameters to represent variations in the top-view profile of the repeating structures are selected. An optical metrology model is developed that includes the selected top-view profile parameters of the repeating structures. The optimized optical metrology model is used to generate simulated diffraction signals that are compared to measured diffraction signals.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.