High voltage silicon carbide devices having bi-directional blocking capabilities

US7391057B2 · kind B2 · utility

Assignee

• Cree, Inc. · US

Inventors

• Sei-Hyung Ryu · Cary, US
• Jason Jenny · Raleigh, US
• Mrinal K. Das · Morrisville, US
• Hudson M. Hobgood · Pittsboro, US
• Anant Agarwal · San Jose, US
• John Williams Palmour · Raleigh, US

Key dates

• Filing date: May 18, 2005
• Grant date: Jun 24, 2008
• Expiry date: Sep 2, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8325

Abstract

High voltage silicon carbide (SiC) devices, for example, thyristors, are provided. A first SiC layer having a first conductivity type is provided on a first surface of a voltage blocking SiC substrate having a second conductivity type. A first region of SiC is provided on the first SiC layer and has the second conductivity type. A second region of SiC is provided in the first SiC layer. The second region of SiC has the first conductivity type and is adjacent to the first region of SiC. A second SiC layer having the first conductivity type is provided on a second surface, opposite the first surface, of the voltage blocking SiC substrate. First, second and third contacts are provided on the first region of SiC, the second region of SiC and the second SiC layer, respectively. Related methods of fabricating high voltage SiC devices are also provided.