Set of at least two masks for the projection of structure patterns
US7393613B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 4, 2004 |
| Grant date | Jul 1, 2008 |
| Priority date | — |
| Expiry date | Apr 3, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70466
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A set of at least two masks, coordinated with one another, for the projection of structure patterns, into the same photosensitive layer arranged on a semiconductor wafer. The first mask includes a semitransparent or nontransparent first layer, which is arranged on a first substrate and in which at least one first opening is formed at a first position, the first opening having a first lateral dimension, which is greater than the resolution limit of a projection system for the projection of the structure patterns. The second mask includes a semitransparent or nontransparent second layer, which is arranged on a second substrate and in which at least one dummy structure assigned to the first opening is formed at a second position, the dummy structure having a second lateral dimension, which is smaller than the resolution limit of the projection system wherein the first position on the first mask corresponds to the second position on the second mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.