Methods for erasing and programming memory devices
US7394702B2 · kind B2 · utility
6Cited by
12References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 5, 2006 |
| Grant date | Jul 1, 2008 |
| Priority date | — |
| Expiry date | Apr 5, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A dual-bit memory device includes a first charge storage region spaced apart from a second charge storage region by an isolation region. Techniques for erasing a memory can be provided in which electrons can be injected into the charge storage regions to erase the charge storage regions. Other techniques for programming a memory can be provided in which holes can be injected into at least one of the charge storage regions to program the charge storage regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.