Meng Ding
35Patents
7h-index
65Co-inventors
72Inventor score
Filing activity: Sep 19, 2003 → Oct 26, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7365389B1 | Memory cell having enhanced high-K dielectric | Electricity | 76 | Expired |
| US7206172B2 | Electrical lapping guide embedded in a shield of a magnetic head | Emerging Cross-Sectional Technologies | 31 | Expired |
| US7469465B2 | Method of providing a low-stress sensor configuration for a lithography-defined read sensor | Emerging Cross-Sectional Technologies | 23 | Expired |
| US7463459B2 | Self-pinned read sensor design with enhanced lead stabilizing mechanism | Physics | 15 | Expired |
| US7072156B2 | Method for biasing magnetoresistive sensor with decoupled hard bias multilayers | Physics | 11 | Expired |
| US7236334B2 | Repeatable ESD protection utilizing a process for unshorting a first shorting material between electrical pads and reshorting by recreating the short | Performing Operations; Transporting | 10 | Expired |
| US7630253B2 | Flash memory programming and verification with reduced leakage current | Physics | 7 | Expired |
| US7432156B1 | Memory device and methods for its fabrication | Electricity | 7 | Active |
| US7394702B2 | Methods for erasing and programming memory devices | Electricity | 6 | Expired |
| US7062838B2 | Method of forming an embedded read element | Emerging Cross-Sectional Technologies | 6 | Expired |
| US7463525B2 | Negative wordline bias for reduction of leakage current during flash memory operation | Physics | 6 | Active |
| US7285827B1 | Back-to-back NPN/PNP protection diodes | Electricity | 6 | Expired |
| US7346977B2 | Method for making a magnetoresistive read head having a pinned layer width greater than the free layer stripe height | Emerging Cross-Sectional Technologies | 5 | Active |
| US8143661B2 | Memory cell system with charge trap | Electricity | 4 | Active |
| US7291279B2 | Method of making a read sensor while protecting it from electrostatic discharge (ESD) damage | Emerging Cross-Sectional Technologies | 3 | Expired |
| US7564091B2 | Memory device and methods for its fabrication | Electricity | 3 | Active |
| US7750407B2 | Strapping contact for charge protection | Electricity | 2 | Active |
| US7345853B2 | Device with ESD protection utilizing a shorting material between electrical pads or leads which are shorted then unshorted by severing the shorting material and then recreating the short by reapplying the shorting material | Performing Operations; Transporting | 2 | Active |
| US7339222B1 | Method for determining wordline critical dimension in a memory array and related structure | Emerging Cross-Sectional Technologies | 1 | Active |
| US8031528B2 | Flash memory programming and verification with reduced leakage current | Physics | 1 | Active |
| US7573103B1 | Back-to-back NPN/PNP protection diodes | Electricity | 0 | Active |
| US11990289B2 | Light-emitting keyboard module with a metal base material flexible copper-clad double-sided circuit board | Electricity | 0 | Active |
| US8809936B2 | Memory cell system with multiple nitride layers | Electricity | 0 | Active |
| US10622370B1 | System and method for manufacturing self-aligned STI with single poly | Electricity | 0 | Active |
| US8642441B1 | Self-aligned STI with single poly for manufacturing a flash memory device | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.