Plasma etching apparatus and plasma etching method
US7396771B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2006 |
| Grant date | Jul 8, 2008 |
| Priority date | — |
| Expiry date | Jun 14, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67253
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma etching apparatus includes a processing chamber in which a specimen is subjected to plasma processing, a specimen holder for holding the specimen, the specimen holder including a temperature controller for controlling temperatures at at least 2 positions of the specimen, at least two gas supply sources for supplying processing gases, at least two gas inlets for introducing the processing gases into the processing chamber, a regulator for independently controlling the compositions or the flow rates of the processing gases introduced from the at least two gas inlets and the temperatures controlled with at least two temperature controllers in the specimen holder, and an electromagnetic wave supply unit for sending an electromagnetic wave into the processing chamber, wherein the compositions or the flow rates of the processing gases introduced from the gas inlets and the temperature controlled with the temperature controllers in the specimen holder are independently controlled.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.