Nitride optoelectronic devices with backside deposition

US7399653B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• David P. Bour · Cupertino, US
• Jacob Smith · Santa Clara, US
• Jie Su · Nanhu, CN
• Sandeep Nijhawan · Los Altos, US

Key dates

• Filing date: Apr 28, 2006
• Grant date: Jul 15, 2008
• Expiry date: Jan 16, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/01335

Abstract

Nitride optoelectronic devices that have asymmetric double-sided structures and methods fabricating such structures are disclosed. Two n-type III-N layers are formed simultaneously over opposite sides of a substrate with substantially the same composition. Thereafter, a p-type III-N active layer is formed over one of the n-type III-N layers but not over the other.