Apparatus and method of measuring defects in an ion implanted wafer by heating the wafer to a treatment temperature and time to substantially stabilize interstitial defect migration while leaving the vacancy defects substantially unaltered.
US7403023B2 · kind B2 · utility
2Cited by
8References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2006 |
| Grant date | Jul 22, 2008 |
| Priority date | — |
| Expiry date | Mar 14, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The invention relates to the use of the metrology methods and the related apparatus disclosed herein that incorporate thermal treatment devices and methods that improve defect detection. Specifically, in one aspect the invention relates to method of thermally treating a semiconductor wafer such that an acceleration of interstitial defect migration is achieved while leaving vacancy defects substantially unaltered.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.