Patent · US Expired

Memory device electrode with a surface structure

US7405418B2 · kind B2 · utility

80Cited by

4References

18Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Thomas Happ · Tarrytown, US
Cay-Uwe Pinnow · Birkenfeld, DE
Michael Kund · Bad Aibling, DE

Key dates

Filing date	Feb 16, 2005
Grant date	Jul 29, 2008
Priority date	—
Expiry date	Feb 16, 2025

Classification

Technology area (CPC G)Physics
CPC primaryG11C13/0004
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

The invention relates to a memory device electrode, in particular for a resistively switching memory device, wherein the surface of the electrode is provided with a structure, in particular comprises one or a plurality of shoulders or projections, respectively. Furthermore, the invention relates to a memory cell comprising at least one such electrode, a memory device, as well as a method for manufacturing a memory device electrode.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.