Capacitor constructions and semiconductor structures
US7405438B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 20, 2004 |
| Grant date | Jul 29, 2008 |
| Priority date | — |
| Expiry date | Jul 28, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/964
Abstract
The invention includes a method of forming a rugged semiconductor-containing surface. A first semiconductor layer is formed over a substrate, and a second semiconductor layer is formed over the first semiconductor layer. Subsequently, a third semiconductor layer is formed over the second semiconductor layer, and semiconductor-containing seeds are formed over the third semiconductor layer. The seeds are annealed to form the rugged semiconductor-containing surface. The first, second and third semiconductor layers are part of a common stack, and can be together utilized within a storage node of a capacitor construction. The invention also includes semiconductor structures comprising rugged surfaces. The rugged surfaces can be, for example, rugged silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.