Electronic apparatus with deposited dielectric layers
US7405454B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 26, 2005 |
| Grant date | Jul 29, 2008 |
| Priority date | — |
| Expiry date | Aug 26, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An atomic layer deposited dielectric layer and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. Depositing a hafnium metal layer on a substrate surface by atomic layer deposition and depositing a hafnium oxide layer on the hafnium metal layer by atomic layer deposition form a hafnium oxide dielectric layer substantially free of silicon oxide. Dielectric layers containing atomic layer deposited hafnium oxide are thermodynamically stable such that the hafnium oxide will have minimal reactions with a silicon substrate or other structures during processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.