Development or removal of block copolymer or PMMA-b-S-based resist using polar supercritical solvent
US7407554B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 12, 2005 |
| Grant date | Aug 5, 2008 |
| Priority date | — |
| Expiry date | Aug 5, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/734
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Methods of developing or removing a select region of block copolymer films using a polar supercritical solvent to dissolve a select portion are disclosed. In one embodiment, the polar supercritical solvent includes chlorodifluoromethane, which may be exposed to the block copolymer film using supercritical carbon dioxide (CO2) as a carrier or chlorodiflouromethane itself in supercritical form. The invention also includes a method of forming a nano-structure including exposing a polymeric film to a polar supercritical solvent to develop at least a portion of the polymeric film. The invention also includes a method of removing a poly(methyl methacrylate-b-styrene) (PMMA-b-S) based resist using a polar supercritical solvent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.