Stackable resistive cross-point memory with schottky diode isolation
US7408212B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 11, 2004 |
| Grant date | Aug 5, 2008 |
| Priority date | — |
| Expiry date | Feb 11, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8836
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An electrically programmable, non-volatile resistive memory includes an array of memory cells, a plurality of bit lines, and a plurality of word lines. Each memory cell comprises a resistive element and a Schottky diode coupled in series and having first and second terminals. Each bit line couples to the first terminal of all memory cells in a respective column of the array. Each word line couples to the second terminal of all memory cells in a respective row of the array. The resistive element for each memory cell may be formed with a film of a perovskite material (e.g., Pr0.7Ca0.3MnO3). The Schottky diode for each memory cell may be formed by a thin film of amorphous silicon. The films for the resistive element and Schottky diode for each memory cell may be stacked in a compact island at the cross point between a bit line and a word line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.