Substrate thickness measuring during polishing
US7409260B2 · kind B2 · utility
43Cited by
30References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 15, 2007 |
| Grant date | Aug 5, 2008 |
| Priority date | — |
| Expiry date | May 15, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method for determining a polishing endpoint includes obtaining spectra from different zones on a substrate during different times in a polishing sequence, matching the spectra with indexes in a library and using the indexes to determining a polishing rate for each of the different zones from the indexes. An adjusted polishing rate can be determined for one of the zones, which causes the substrate to have a desired profile when the polishing end time is reached.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.