Patent · US Active

Method of reducing contamination by removing an interlayer dielectric from the substrate edge

US7410885B2 · kind B2 · utility

7Cited by

5References

12Claims

0Family size

Assignee

Advanced Micro Devices, Inc. · US

Inventors

Holger Schuehrer · Dresden, DE
Christin Bartsch · Neustadt in Sachsen, DE
Carsten Hartig · Meerane, DE

Key dates

Filing date	May 17, 2006
Grant date	Aug 12, 2008
Priority date	—
Expiry date	Dec 14, 2026

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/76843
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

By performing at least one additional wet chemical etch process in the edge region and in particular on the bevel of a substrate during the formation of a metallization layer, the dielectric material, especially the low-k dielectric material, may be reliably removed from the bevel prior to the formation of any barrier and metal layers. Moreover, an additional wet chemical etch process may be performed after the deposition of the metal to remove any unwanted metal and barrier material from the edge region and the bevel. Accordingly, defect issues and contamination of substrates and process tools may be efficiently reduced.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.