Method of revealing crystalline defects in a bulk substrate
US7413964B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 5, 2006 |
| Grant date | Aug 19, 2008 |
| Priority date | — |
| Expiry date | Dec 21, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N21/9501
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
This invention provides methods for predictively revealing, in bulk silicon substrates, latent crystalline defects in bulk silicon substrates that become apparent only after subsequent processing, e.g., after processing during which multiple layers are split and lifted from the bulk substrates. Preferred predictive methods include a revealing heat treatment of bulk substrates conducted in a non-reducing atmosphere at a temperature in the range from approximately 500° C. to 1300° C. If desired, a further revealing heat treatment or defect enlargement step can be performed to enlarge defects revealed by the first revealing heat treatment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.