Patent · US Expired

Process for removing a residue from a metal structure on a semiconductor substrate

US7413993B2 · kind B2 · utility

1Cited by

6References

27Claims

0Family size

Assignees

Infineon Technologies AG · DE
NANYA TECHNOLOGY CORPORATION · TW

Inventors

Ronald Gottzein · Dresden, DE
Jens Bachmann · Langen, DE
Dirk Efferenn · Dresden, DE
Uwe Kahler · Dresden, DE
Chung-Hsin Lin · New Taipei, TW
Wen-Bin Lin · Dresden, DE
Lee A. Donohue · Windsor, US

Key dates

Filing date	Nov 22, 2004
Grant date	Aug 19, 2008
Priority date	—
Expiry date	Jan 8, 2025

Classification

Technology area (CPC H)Electricity
CPC primaryH01J2237/3342
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

The invention is concerned with a process for removing residue comprising a polymeric resist and metal oxide from a metal structure on a semiconductor substrate, the process comprising the steps of: (a) heating up the substrate with the metal structure in the presence of molecular nitrogen gas (N2); (b) a stabilization step in the presence of pure molecular nitrogen gas (N2); (c) a passivation step employing a plasma containing at least one of the group of water, nitrogen and oxygen; and (d) a stripping step containing oxygen to remove the residue, comprising resist.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.