High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities
US7414268B2 · kind B2 · utility
7Cited by
72References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 18, 2005 |
| Grant date | Aug 19, 2008 |
| Priority date | — |
| Expiry date | Aug 17, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
Abstract
Silicon carbide high voltage semiconductor devices and methods of fabricating such devices are provided. The devices include a voltage blocking substrate. Insulated gate bipolar transistors are provided that have a voltage blocking substrate. Planar and beveled edge termination may be provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.