Electronic device including a static-random-access memory cell and a process of forming the electronic device
US7414877B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 23, 2006 |
| Grant date | Aug 19, 2008 |
| Priority date | — |
| Expiry date | Feb 17, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/215
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An electronic device can include a static-random-access memory cell. The static-random-access memory cell can include a first transistor of a first type and a second transistor of a second type. The first transistor can have a first channel length extending along a first line, and the second transistor can have a second channel length extending along a second line. The first line and the second line can intersect at an angle having a value other than any integer multiple of 22.5°. In a particular embodiment, the first transistor can include a pull-up transistor, and the second transistor can include a pass gate or pull-down transistor. A process can be used to form semiconductor fins and conductive members, which include gate electrode portions, to achieve the electronic device including the first and second transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.