Patent · US Active

Method of increasing the etch selectivity in a contact structure of semiconductor devices

US7416973B2 · kind B2 · utility

6Cited by

7References

10Claims

0Family size

Assignee

Advanced Micro Devices, Inc. · US

Inventors

Carsten Peters · Dresden, DE
Heike Salz · Radebeul, DE
Ralf Richter · Dresden, DE
Matthias Schaller · Dresden, DE

Key dates

Filing date	Oct 3, 2006
Grant date	Aug 26, 2008
Priority date	—
Expiry date	Mar 31, 2027

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/0212
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

By providing an additional silicon dioxide based etch stop layer, a corresponding etch process for forming contact openings for directly connecting polysilicon lines and active areas may be controlled in a highly reliable manner. In another aspect, the etch selectivity of the contact structure may be increased by a modification of the etch behavior of the exposed portion of the contact etch stop layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.