Method for fabricating controlled stress silicon nitride films
US7416995B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 12, 2005 |
| Grant date | Aug 26, 2008 |
| Priority date | — |
| Expiry date | Jul 5, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a multiple layer silicon nitride film on a semiconductor substrate is provided herein. In one embodiment, a method for fabricating a multiple layer silicon nitride film on a semiconductor substrate includes providing a substrate over which the multiple layer silicon nitride film is to be formed; and forming the multiple layer silicon nitride film in a single processing reactor by: (a) depositing a base layer comprising silicon nitride on the base structure; (b) depositing a middle layer comprising a stress-controlling material on the base layer; and (c) depositing a top layer comprising silicon nitride on the middle layer. The stress-controlling material selectively increases or reduces the stress of the multiple layer silicon nitride film as compared to silicon nitride alone.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.