Method and apparatus for inspecting integrated circuit pattern
US7417444B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 9, 2005 |
| Grant date | Aug 26, 2008 |
| Priority date | — |
| Expiry date | Nov 9, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2817
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.