Patent · US Active

CMOS gate structure comprising predoped semiconductor gate material with improved uniformity of dopant distribution and method of forming the structure

US7419867B2 · kind B2 · utility

2Cited by

5References

24Claims

0Family size

Assignee

Advanced Micro Devices, Inc. · US

Inventors

Karsten Wieczorek · Dresden, DE
Manfred Horstmann · Dresden, DE
Thomas Feudel · Radebeul, DE

Key dates

Filing date	Jun 16, 2005
Grant date	Sep 2, 2008
Priority date	—
Expiry date	Jun 28, 2026

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/601
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

By predoping of a layer of deposited semiconductor gate material by incorporating dopants during the deposition process, a high uniformity of the dopant distribution may be achieved in the gate electrodes of CMOS devices subsequently formed in the layer of gate material. The improved uniformity of the dopant distribution results in reduced gate depletion and reduced threshold voltage shift in the transistors of the CMOS devices.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.