Metal thin film and semiconductor comprising a metal thin film
US7419920B2 · kind B2 · utility
1Cited by
0References
4Claims
0Family size
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Key dates
| Filing date | Dec 12, 2005 |
| Grant date | Sep 2, 2008 |
| Priority date | — |
| Expiry date | Aug 2, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metal oxide thin film may be obtained by providing a source gas and an oxidizer gas. The source gas may include a hydrolyzable metallic compound. The oxidizer gas may include a hydrate of a metal salt. The metal oxide thin film may be obtained by alternately feeding the source gas and the oxidizer gas into a reaction chamber in which a substrate is placed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.