Method for plasma ignition
US7422664B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 3, 2006 |
| Grant date | Sep 9, 2008 |
| Priority date | — |
| Expiry date | Feb 3, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32009
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for igniting a plasma in a semiconductor process chamber is provided herein. In one embodiment, a method for igniting a plasma in a semiconductor substrate process chamber having an electrically isolated anode, wherein the plasma has failed to ignite upon applying a plasma ignition voltage to a cathode of the process chamber, includes the steps of reducing the magnitude of the voltage applied to the cathode; reapplying the plasma ignition voltage to the cathode; and monitoring the process chamber to determine if the plasma has ignited. The step of monitoring the process chamber may have a duration of a first period of time. The step of reducing the magnitude of the voltage applied to the cathode may have a duration of a second period of time. The steps of reducing the cathode voltage magnitude and reapplying the plasma ignition voltage may be repeated until a plasma ignites.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.