Plasma etch process using polymerizing etch gases with different etch and polymer-deposition rates in different radial gas injection zones with time modulation
US7431859B2 · kind B2 · utility
13Cited by
5References
16Claims
0Family size
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Key dates
| Filing date | Apr 28, 2006 |
| Grant date | Oct 7, 2008 |
| Priority date | — |
| Expiry date | Apr 28, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32449
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma etch process includes injecting process gases with different compositions of chemical species through different radial gas injection zones of an overhead electrode to establish a desired distribution of chemical species among the plural gas injection zones.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.