Process to open carbon based hardmask
US7432210B2 · kind B2 · utility
5Cited by
6References
9Claims
0Family size
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Key dates
| Filing date | Oct 5, 2005 |
| Grant date | Oct 7, 2008 |
| Priority date | — |
| Expiry date | Aug 31, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31122
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of opening a carbon-based hardmask layer composed of amorphous carbon containing preferably at least 60% carbon and between 10 and 40% hydrogen. The hardmask is opened by plasma etching using an etching gas composed of H2, N2, and CO. The etching is preferably performed in a plasma etch reactor having an HF biased pedestal electrode and a capacitively VHF biased showerhead.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.