Dual surface SOI by lateral epitaxial overgrowth
US7435639B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 31, 2006 |
| Grant date | Oct 14, 2008 |
| Priority date | — |
| Expiry date | Jun 5, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/405
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor process and apparatus provide a planarized hybrid substrate (18) by exposing a buried oxide layer (80) in a first area (99), selectively etching the buried oxide layer (80) to expose a first semiconductor layer (70) in a second smaller seed area (98), and then epitaxially growing a first epitaxial semiconductor material from the seed area (98) of the first semiconductor layer (70) that fills the second trench opening (100) and grows laterally over the exposed insulator layer (80) to fill at least part of the first trench opening (99), thereby forming a first epitaxial semiconductor layer (101) that is electrically isolated from the second semiconductor layer (90). By forming a first SOI transistor device (160) over a first SOI layer (90) using deposited (100) silicon and forming first SOI transistor (161) over an epitaxially grown (110) silicon layer (101), a high performance CMOS device is obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.