Enhancing Schottky breakdown voltage (BV) without affecting an integrated MOSFET-Schottky device layout
US7436022B2 · kind B2 · utility
23Cited by
1References
39Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 29, 2006 |
| Grant date | Oct 14, 2008 |
| Priority date | — |
| Expiry date | Mar 30, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
Abstract
This invention discloses a semiconductor power device that includes an active cell area having a plurality of power transistor cells and a junction barrier Schottky (JBS) area. The semiconductor power device includes the JBS area that further includes a plurality of Schottky diodes each having a PN junction disposed on an epitaxial layer near a top surface of a semiconductor substrate wherein the PN junction further includes a counter dopant region disposed in the epitaxial layer for reducing a sudden reversal of dopant profile near the PN junction for preventing an early breakdown in the PN junction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.