High blocking semiconductor component comprising a drift section

US7436023B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Franz Hirler · Isen, DE
• Anton Mauder · Kolbermoor, DE
• Frank Pfirsch · Birkenfeld, DE

Key dates

• Filing date: Aug 11, 2006
• Grant date: Oct 14, 2008
• Expiry date: Aug 11, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/256

Abstract

A semiconductor component having a drift path (2) which is formed in a semiconductor body (1), is composed of a semiconductor material of first conductance type. The drift path (2) is arranged between at least one first and one second electrode (3, 4) and has a trench structure in the form of at least one trench (18). A dielectric material which is referred to as a high-k material and has a relative dielectric constant εr where εr≧20 is arranged in the trench structure such that at least one high-k material region (5) and one semiconductor material region (6) of the first conductance type are arranged in the area of the drift path (2).