Gallium nitride semiconductor device

US7436039B2 · kind B2 · utility

Assignee

• Velox Semiconductor Corporation · US

Inventors

• TingGang Zhu · Cupertino, US
• Bryan Shelton · Bound Brook, US
• Marek Pabisz · Quakertown, US
• Mark Gottfried · Fryeburg, US
• Linlin Liu · Fryeburg, US
• Milan Pophristic · New Brunswick, US
• Michael Murphy · Long Beach, US
• Richard A. Stall · Montgomery, US

Key dates

• Filing date: Jan 6, 2005
• Grant date: Oct 14, 2008
• Expiry date: Jul 4, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

A gallium nitride based semiconductor Schottky diode fabricated from a n+ doped GaN layer having a thickness between one and six microns disposed on a sapphire substrate; an n− doped GaN layer having a thickness greater than one micron disposed on said n+ GaN layer patterned into a plurality of elongated fingers and a metal layer disposed on the n− doped GaN layer and forming a Schottky junction therewith. The layer thicknesses and the length and width of the elongated fingers are optimized to achieve a device with breakdown voltage of greater than 500 volts, current capacity in excess of one ampere, and a forward voltage of less than three volts.