Patent · US Active

Nonvolatile memory cell

US7436694B2 · kind B2 · utility

8Cited by

10References

36Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Joerg Berthold · Munich, DE
Dieter Draxelmayr · Villach, AT
Winfried Kamp · Munich, DE
Michael Kund · Bad Aibling, DE
Tim Schoenauer · Peising, DE

Key dates

Filing date	May 31, 2006
Grant date	Oct 14, 2008
Priority date	—
Expiry date	Mar 14, 2027

Classification

Technology area (CPC G)Physics
CPC primaryG11C14/009
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

Nonvolatile memory cell, having a first resistor that is electrically programmable in a nonvolatile fashion, a second resistor that is electrically programmable in a nonvolatile fashion, a first leakage current reducing element connected between the first resistor and an operating potential, and a second leakage current reducing element connected between the second resistor and the operating potential.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.