Patent · US Active

Resistive memory including bipolar transistor access devices

US7436695B2 · kind B2 · utility

14Cited by

1References

35Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Thomas Nirschl · Putzbrunn, DE
Thomas Happ · Tarrytown, US
Klaus Aufinger · Ottobrunn, DE

Key dates

Filing date	Nov 21, 2006
Grant date	Oct 14, 2008
Priority date	—
Expiry date	Nov 21, 2026

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T29/49002
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A memory includes a first bipolar transistor, a first bit line, and a first resistive memory element coupled between a collector of the first bipolar transistor and the first bit line. The memory includes a second bit line, a second resistive memory element coupled between an emitter of the first bipolar transistor and the second bit line, and a word line coupled to a base of the first bipolar transistor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.