Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition
US7438760B2 · kind B2 · utility
29Cited by
58References
31Claims
0Family size
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Key dates
| Filing date | Jan 30, 2006 |
| Grant date | Oct 21, 2008 |
| Priority date | — |
| Expiry date | Feb 4, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of making Si-containing films that contain relatively high levels of substitutional dopants involve chemical vapor deposition using trisilane and a dopant precursor. Extremely high levels of substitutional incorporation may be obtained, including crystalline silicon films that contain 2.4 atomic % or greater substitutional carbon. Substitutionally doped Si-containing films may be selectively deposited onto the crystalline surfaces of mixed substrates by introducing an etchant gas during deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.